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STMicroelectronics MDmesh MOSFETs | New Product Brief

October 28, 2019 by Mouser Electronics

This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.

STMicroelectronics MDmesh MOSFETs

STMicroelectronics MDmesh M6 super-junction high-voltage MOSFETs are optimized to enable higher efficiency operation and higher power density in resonant converter topologies. 

MDmesh M6power MOSFETs have an extremely low gate charge and a capacitance profile optimized for light load conditions and high-frequency operation, while the threshold voltage is optimized for soft switching. 

The MOSFETs have a 600V to 700V breakdown voltage and current ratings up to 72A. The M6 Devices are offered in a variety of packages, including TO-Leadless and PowerFLAT 5x6 options.

ST’s MDmesh M6 power MOSFETs also have extremely low RDS(ON), with values as low as 36mΩ providing an additional efficiency increase.

  • Extremely high-efficiency performance to increase power density
  • Low Qg and optimized capacitance profile for light load conditions and high-frequency operation
    • Qg as low as 16nC
  • Threshold voltage optimized for soft switching
  • Breakdown voltage: 600V to 700V
  • Max drain current: up to 72A
  • Multiple package options including TO-LL and PowerFLAT 5x6
    • TO-LL: efficient thermal management, 30% smaller footprint
    • PowerFLAT 5x6: longest insulation path lengths and highest clearances

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