STMicroelectronics MDmesh MOSFETs | New Product Brief
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
STMicroelectronics MDmesh MOSFETs
STMicroelectronics MDmesh M6 super-junction high-voltage MOSFETs are optimized to enable higher efficiency operation and higher power density in resonant converter topologies.
MDmesh M6power MOSFETs have an extremely low gate charge and a capacitance profile optimized for light load conditions and high-frequency operation, while the threshold voltage is optimized for soft switching.
The MOSFETs have a 600V to 700V breakdown voltage and current ratings up to 72A. The M6 Devices are offered in a variety of packages, including TO-Leadless and PowerFLAT 5x6 options.
ST’s MDmesh M6 power MOSFETs also have extremely low RDS(ON), with values as low as 36mΩ providing an additional efficiency increase.
- Extremely high-efficiency performance to increase power density
- Low Qg and optimized capacitance profile for light load conditions and high-frequency operation
- Qg as low as 16nC
- Threshold voltage optimized for soft switching
- Breakdown voltage: 600V to 700V
- Max drain current: up to 72A
- Multiple package options including TO-LL and PowerFLAT 5x6
- TO-LL: efficient thermal management, 30% smaller footprint
- PowerFLAT 5x6: longest insulation path lengths and highest clearances
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