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Discrete Semiconductor Devices and Circuits

PN Junctions


19 questions By Tony R. Kuphaldt

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  • Question 13 of 19

    If a semiconductor PN junction is reverse-biased, ideally no continuous current will go through it. However, in real life there will be a small amount of reverse-bias current that goes through the junction. How is this possible? What allows this reverse current to flow?

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  • Question 14 of 19

    Shockley’s diode equation in standard form is quite lengthy, but it may be considerably simplified for conditions of room temperature. Note that if the temperature (T) is assumed to be room temperature (25o C), there are three constants in the equation that are the same for all PN junctions: T, k, and q.

    $$I_D= I_S(e^{\frac{qV_D}{NkT}} -1)$$

    The quantity \(\frac{kT}{q}\) is known as the thermal voltage of the junction. Calculate the value of this thermal voltage, given a room temperature of 25o C. Then, substitute this quantity into the original “diode formula” so as to simplify its appearance.

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  • Question 15 of 19

    A student sets up a circuit that looks like this, to gather data for characterizing a diode:





    Measuring diode voltage and diode current in this circuit, the student generates the following table of data:


    Vdiode Idiode

    0.600 V 1.68 mA

    0.625 V 2.88 mA

    0.650 V 5.00 mA

    0.675 V 8.68 mA

    0.700 V 14.75 mA

    0.725 V 27.25 mA

    0.750 V 48.2 mA




    This student knows that the behavior of a PN junction follows Shockley’s diode equation, and that the equation may be simplified to the following form:


    $$I_{diode} = I_S(e^{\frac{V_{diode}}{K}} -1)$$



    Where,

    K = a constant incorporating both the thermal voltage and the nonideality coefficient

    The goal of this experiment is to calculate K and IS, so that the diode’s current may be predicted for any arbitrary value of voltage drop. However, the equation must be simplified a bit before the student can proceed.

    At substantial levels of current, the exponential term is very much larger than unity \((e^{\frac{V_{diode}}{K}}>>1)\), so the equation may be simplified as such:


    $$I_{diode} \approx I_S(e^{\frac{V_{diode}}{K}})$$



    From this equation, determine how the student would calculate K and IS from the data shown in the table. Also, explain how this student may verify the accuracy of these calculated values.

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