Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.
In partnership with Infineon Technologies
A stable frequency source is a common requirement for many electronic and most RF devices. Phase noise is the term used to describe measurements of the short-term frequency stability of these sources. This white paper provides a brief technical introduction to phase noise concepts as well as an overview of how phase noise is measured and reported.
In partnership with Rohde & Schwarz
