This white paper is designed to provide you with a toolbox on how to look for, assess, and address jitter in your signal verification tasks. You will find real-world scenarios, recommended test and measurement solutions and more – all in a bite-sized format.
September 28, 2022 by Rohde & Schwarz
Compared to the next best silicon alternatives, we quantitatively show how much better systems based on GaN power devices can be. We also provide further insight into corresponding topologies, choice of magnetics, and switching frequencies to take the full benefit of the next generation of power devices.
In partnership with Infineon Technologies
Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.
In partnership with Infineon Technologies
The next generation of all kinds of devices will rely heavily on new iterations of Wi-Fi technology, which will be more powerful, efficient, and complex than ever before. These developments and advancements will enable more connected homes, offices, and factories.
November 01, 2021 by Rohde & Schwarz
Learn how GaN-based PowiGaN switches help InnoSwitch ICs obtain up to 95% efficiency across the full load range and up to 100 W in enclosed adapter implementations without requiring a heatsink.
In partnership with Power Integrations
