This application note describes the structure and design philosophy of onsemi High-Side SmartFETs, and provides specific examples and numerical calculations of how to apply SmartFETs with analog current sense into your system to achieve the optimal switching performance.
November 09, 2022 by onsemi
The global condition-based monitoring (CbM) market has experienced significant growth over the past few years, and it will likely only continue to grow in the near future. This growth coincides with the rapid advancement of MEMS accelerometers for use in vibration sensing applications, now rivaling the once-dominant piezoelectric (or PZT) accelerometer.
August 31, 2021 by Analog Devices
This paper provides an overview of the key characteristics of ON Semiconductor Gen 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. This resource also provides a guideline on the usage of the NCP51705 an isolated gate driver for SiC MOSFETs.
May 07, 2021 by onsemi
The global condition-based monitoring (CbM) market has experienced significant growth over the past few years, and it will likely only continue to grow in the near future. This growth coincides with the rapid advancement of MEMS accelerometers for use in vibration sensing applications, now rivaling the once-dominant piezoelectric (or PZT) accelerometer.
March 03, 2021 by Analog Devices
December 21, 2020 by TE Connectivity
November 03, 2020 by Infineon Technologies
September 21, 2020 by onsemi
February 01, 2020 by Vicor
