This paper provides an overview of the key characteristics of ON Semiconductor Gen 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. This resource also provides a guideline on the usage of the NCP51705 an isolated gate driver for SiC MOSFETs.
May 07, 2021 by ON Semiconductor
The global condition-based monitoring (CbM) market has experienced significant growth over the past few years, and it will likely only continue to grow in the near future. This growth coincides with the rapid advancement of MEMS accelerometers for use in vibration sensing applications, now rivaling the once-dominant piezoelectric (or PZT) accelerometer.
March 02, 2021 by Analog Devices
December 21, 2020 by TE Connectivity