Everyone knows that 5G is significant. But will it supplant wireless technologies like Wi-Fi and Bluetooth in IIoT and Industry 4.0 applications? This article dives into what's so special about 5G compared to its alternatives.
In partnership with Digi-Key Electronics
As we enter the age of millimeter waves, radio frequency technology will likely be in even greater demand. Over the years, Murata has continued to refine its wireless communication technologies and now offers an extensive portfolio of key devices and modules for wireless communication that cover a diverse breadth of applications.
In partnership with Murata Electronics Singapore (Pte.) Ltd.
Emerging technologies based on Wide Band Gap (WBG) semiconductor materials enable new approaches to increase power density. At high switching frequencies, GaN HEMTs for synchronous rectifier (SR) switches have the advantages of lower charges and faster switching transitions.
In partnership with Infineon Technologies
Today's advanced chips need power DC-DC sources right at the point-of-load (POL). This article discusses the need for distributed power networks and the role of POL power devices. We introduce a class of POL DC-DC converters from TDK that use advanced packaging techniques to meet performance needs.
In partnership with Digi-Key Electronics
Compared to the next best silicon alternatives, we quantitatively show how much better systems based on GaN power devices can be. We also provide further insight into corresponding topologies, choice of magnetics, and switching frequencies to take the full benefit of the next generation of power devices.
In partnership with Infineon Technologies
Powered by 5G, Wi-Fi, and Bluetooth, V2X (Vehicle to Everything) is a key feature of the autonomous driving evolution. This eBook will provide engineers with a better understanding of the possibilities available with V2X technology. Discover the safety and environmental impacts of V2X and get a look at its bright future.
In partnership with Murata Electronics Singapore (Pte.) Ltd.
Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.
In partnership with Infineon Technologies
A stable frequency source is a common requirement for many electronic and most RF devices. Phase noise is the term used to describe measurements of the short-term frequency stability of these sources. This white paper provides a brief technical introduction to phase noise concepts as well as an overview of how phase noise is measured and reported.
In partnership with Rohde & Schwarz
Using this comprehensive guide, engineers will feel confident to switch to Silicon Carbide (SiC). They can leverage SiC's low switching losses, improved system efficiency, high power density in a smaller footprint, 3x superiority to silicon in thermal conduction, and many other benefits. Download your copy here!
August 18, 2022 by Future Electronics
