This application note describes the structure and design philosophy of onsemi High-Side SmartFETs, and provides specific examples and numerical calculations of how to apply SmartFETs with analog current sense into your system to achieve the optimal switching performance.
November 09, 2022 by onsemi
Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.
In partnership with Infineon Technologies
This article explores the requirements for DC-to-DC converters in railway systems, including a general description of DC railways, how DC-to-DC converters are used in these systems, and the standards that allow these devices to function regardless of operating conditions.
June 10, 2022 by P-Duke Power
This application note highlights the MOSFET parameters playing an important role in current sharing. It also quantifies the additional power loss incurred in a MOSFET carrying more current due to the current sharing imbalance.
July 27, 2021 by Infineon Technologies
September 21, 2020 by onsemi
