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Making User-Friendly Products: Overcoming Challenges in the Practical Application of GaN, a Promising Next-Generation Power Semiconductor

Making User-Friendly Products: Overcoming Challenges in the Practical Application of GaN, a Promising Next-Generation Power Semiconductor

In this article, ROHM will discuss the challenges of commercializing GaN power devices, a next-generation power semiconductor expected to improve energy savings and miniaturization in a variety of applications.


Striving for Zero Malfunctions: Behind the Scenes of ROHM’s Ongoing EMC Measures

Striving for Zero Malfunctions: Behind the Scenes of ROHM’s Ongoing EMC Measures

This article introduces EMC measures for semiconductors – crucial for ensuring the safe operation of electronic devices.


Enabling Power Supplies for Automotive Camera Modules

Enabling Power Supplies for Automotive Camera Modules

Access this whitepaper to get in-depth insights and solutions. Get a head start on the future of automotive applications with Taiyo Yuden.


Understanding Power, Performance, and Area Tradeoffs for Analog IC Designs

Understanding Power, Performance, and Area Tradeoffs for Analog IC Designs

Learn about three key indicators of semiconductor process technology: power, performance, and area (PPA). We will discuss the trade-offs between these indicators and how the PPA metric supports the comparison of analog capabilities across different processes. Finally, using the PPA figure of merit, it is shown that the onsemi 65 nm BCD Treo platform provides at least a 5x integral improvement on average over older 180 nm technologies.


Beyond Batteries: Paving the Way for the Future

Beyond Batteries: Paving the Way for the Future

Download this white paper for a deeper look into power consumption and power management for IoT.


Revolutionizing Edge AI Computing with CUBE

Revolutionizing Edge AI Computing with CUBE

Winbond CUBE addresses the increasing demand for AI applications by providing a high-bandwidth, power-efficient, compact, and cost-effective memory solution.


Over the Horizon — Principles and Challenges of Operating in The HF Band

Over the Horizon — Principles and Challenges of Operating in The HF Band

Discover the latest advancements and challenges in OTH radar technology, including insights into HF propagation, interference sources, and systems like US ROTHR and Australia's JORN.


Next-Gen 650 V SiC MOSFETs Improve Performance for EV Applications

Next-Gen 650 V SiC MOSFETs Improve Performance for EV Applications

Onboard chargers (OBCs) and DC-DC converters in EVs demand high performance but are also cost-sensitive applications. This white paper investigates onsemi’s M3S 650V SiC MOSFET technology for high-speed switching power applications in electric vehicles and other energy-efficient systems.


Thermal and Electrical Modeling and Optimization of SiC Power Modules for Traction Inverters

Thermal and Electrical Modeling and Optimization of SiC Power Modules for Traction Inverters

When designing robust SiC power modules, it is critical to consider package inductance, die−level mismatch, and Joule heating. This paper investigates these key characteristics, demonstrates the effectiveness of simulation tools in modeling SiC power module performance, and proposes mitigation measures to further improve reliability.


Achieving Successful Timing, Power, and Physical Signoff for Multi-Die Designs

Achieving Successful Timing, Power, and Physical Signoff for Multi-Die Designs

Download this white paper to learn about the timing, power, and physical signoffchallenges of multi-die designs, along with advanced electronic design automation (EDA) solutions available today.


Maximizing Power Amplifier Efficiency with Harmonic Load Pull Measurements

Maximizing Power Amplifier Efficiency with Harmonic Load Pull Measurements

Harmonic load pull measurements explore potential device efficiency to find the best design topology. Download this paper which talks about a unique joint approach from a few notable industrial players.


When Planar is Superior to Trench: An In−Depth Look at the Continued Evolution of Silicon Carbide MOSFETs

When Planar is Superior to Trench: An In−Depth Look at the Continued Evolution of Silicon Carbide MOSFETs

Avoid mistakes when transitioning your power applications from silicon to SiC. Understanding current technology limitations and development roadmaps can help you make the right decisions between planar and trench SiC today and tomorrow.


Efficient, Flexible Gate Drive Power Solutions for IGBTs, Si and SiC MOSFETs with Isolated DC/DC Converters

Efficient, Flexible Gate Drive Power Solutions for IGBTs, Si and SiC MOSFETs with Isolated DC/DC Converters

Learn more about how isolated DC/DC converters with programmable outputs can optimize gate drive power solutions for IGBTs, Si, and SiC MOSFETs to achieve higher efficiency, flexibility, and future-proof performance.


How Much Can You Save With a Renewable Load?

How Much Can You Save With a Renewable Load?

Discover how much energy savings a facility can see when switching to a regenerative load.


Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Sign up and access onsemi’s guide to do more with Silicon Carbide solutions.


Wi-Fi 6/6E is Revolutionizing Smart Factory Environments

Wi-Fi 6/6E is Revolutionizing Smart Factory Environments

Wonder how the latest Wi-Fi is transforming factories? Features like OFDMA, MU-MIMO, and Target Wake Time are driving efficiency, reliability, and scalability to new levels, creating next-generation smart facilities.


Fuji’s X-Series RC-IGBT Technology Enhancements to the Dual.XT Module

Fuji’s X-Series RC-IGBT Technology Enhancements to the Dual.XT Module

Learn more about Fuji Electric's new X-Series RC-IGBT technology! Our high-performance IGBT Modules offer a compact design that provides greater power output.


Plug & Play Solution for Balancing Supercapacitor with MOSFETs and PCB Boards

Plug & Play Solution for Balancing Supercapacitor with MOSFETs and PCB Boards

Optimize your energy-efficient designs with Advanced Linear Devices' new PCB for balancing supercapacitors.


Auto-Balance Supercapacitors with Voltage Ratings of 3V or Higher

Auto-Balance Supercapacitors with Voltage Ratings of 3V or Higher

The SAB MOSFET provides unprecedented supercap cell balancing and protection by managing the voltage and leakage current, all while consuming near-zero power.


Enhanced TDR Measurements with the SNA5000A Vector Network Analyzer from Siglent

Enhanced TDR Measurements with the SNA5000A Vector Network Analyzer from Siglent

This application note discusses the advanced TDR implementation and capabilities of the Siglent SNA5000A vector network analyzers while comparing the quality of 2 standard USB cables.