Teledyne e2v’s chips target space-based applications with significantly improved performance, protection against radiation, and spatial efficiency.
Teledyne e2v’s chips target space-based applications with significantly improved performance, protection against radiation, and spatial efficiency.
New transistors, memory devices, and RF modules defy the radiation-saturated conditions of space.
New transistors, memory devices, and RF modules defy the radiation-saturated conditions of space.
Weebit Nano and Efabless are teaming up to make it easier for chip designers to prototype intelligent devices using…
Weebit Nano and Efabless are teaming up to make it easier for chip designers to prototype intelligent devices using Weebit's advanced memory technology.
The new Pascari brand will provide SSDs for data-heavy enterprise applications.
The new Pascari brand will provide SSDs for data-heavy enterprise applications.
From embedded systems to high-performance storage, the latest memory advancements are stacking skyward to maximize…
From embedded systems to high-performance storage, the latest memory advancements are stacking skyward to maximize density and speed.
With speeds up to 143 MHz, the new 2-Mb and 4-Mb serial SRAM devices can be a lower-cost alternative to traditional…
With speeds up to 143 MHz, the new 2-Mb and 4-Mb serial SRAM devices can be a lower-cost alternative to traditional parallel SRAM products.
The CXL data protocol is essential for meeting the interconnect needs of today’s data centers. Learn the key elements…
The CXL data protocol is essential for meeting the interconnect needs of today’s data centers. Learn the key elements and benefits of this protocol, along with what’s new in CXL version 3.0.
Three companies—Samsung, Micron, and SK Hynix—have announced moves in the high-bandwidth memory (HBM) 3E market.
Three companies—Samsung, Micron, and SK Hynix—have announced moves in the high-bandwidth memory (HBM) 3E market.
In our final ISSCC spotlight, we explore Samsung's paper on a high-capacity, high-speed DDR5 memory that implements a…
In our final ISSCC spotlight, we explore Samsung's paper on a high-capacity, high-speed DDR5 memory that implements a monolithic-die-based 32-Gb DDR5 with 8 Gb/s/pin—all without leaving the 10 nm process.
The company’s UFS 4.0 solution meets AEC-Q100 Grade 2 requirements.
The company’s UFS 4.0 solution meets AEC-Q100 Grade 2 requirements.
Rambus' latest registering clock driver inches DDR5 memory closer to data center-level performance.
Rambus' latest registering clock driver inches DDR5 memory closer to data center-level performance.
Memory at both the HPC and edge levels may get a big leg up with help from magnetics.
Memory at both the HPC and edge levels may get a big leg up with help from magnetics.
When you look under the hood of generative AI processing, the system design challenges are many. Learn how efficiency,…
When you look under the hood of generative AI processing, the system design challenges are many. Learn how efficiency, power consumption, and memory issues all come into play.
At this year's Flash Memory Summit, two companies combined their respective cooling technology and SSD controllers to…
At this year's Flash Memory Summit, two companies combined their respective cooling technology and SSD controllers to unlock unprecedented storage performance.
Here are three announcements from the 2023 Flash Memory Summit that reflect some of the biggest trends in memory and…
Here are three announcements from the 2023 Flash Memory Summit that reflect some of the biggest trends in memory and storage technology.
Generative AI tools like ChatGPT have had a huge impact in numerous sectors of society. As engineers, it’s helpful for…
Generative AI tools like ChatGPT have had a huge impact in numerous sectors of society. As engineers, it’s helpful for us to understand the computing technology that makes it possible.
As vehicles shift to being autonomous and fully connected, automotive E/E architectures are transforming to meet these…
As vehicles shift to being autonomous and fully connected, automotive E/E architectures are transforming to meet these evolving requirements.
Micron aims to strike a balance of high bandwidth, power efficiency, and speed with its latest generation of…
Micron aims to strike a balance of high bandwidth, power efficiency, and speed with its latest generation of high-bandwidth memory (HBM3) technology.
Rising to meet the automotive sector’s need for a long memory lifetime and fast data logging, Infineon has introduced…
Rising to meet the automotive sector’s need for a long memory lifetime and fast data logging, Infineon has introduced two new FRAM devices.
The team has claimed to solve a common problem in conventional resistive switching memories by introducing a chemical…
The team has claimed to solve a common problem in conventional resistive switching memories by introducing a chemical element: barium.
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