The 40 nm Arm Cortex-M4F device combines 256 KB flash, CAN FD, and ASIL-B positioning for NEV subsystems.
The 40 nm Arm Cortex-M4F device combines 256 KB flash, CAN FD, and ASIL-B positioning for NEV subsystems.
Intel’s 2716 and 2732 took UV EPROMs from “power-supply problem” to practical, socketable firmware for mainstream…
Intel’s 2716 and 2732 took UV EPROMs from “power-supply problem” to practical, socketable firmware for mainstream 8-bit and early 16-bit designs.
Mostek’s 16K MK4116 and its 64K successor, the MK4164, became the DRAMs that defined late-1970s and early-1980s…
Mostek’s 16K MK4116 and its 64K successor, the MK4164, became the DRAMs that defined late-1970s and early-1980s microcomputers and set conventions the industry followed for years.
Look out, flash! With a resounding vote of confidence from Texas Instruments and Onsemi, ReRAM may be here to stay.
Look out, flash! With a resounding vote of confidence from Texas Instruments and Onsemi, ReRAM may be here to stay.
In this article, Gordon posed a set of questions to TSMC about their next steps going forward.
In this article, Gordon posed a set of questions to TSMC about their next steps going forward.
Enjoy this roundup of our favorite All About Circuits research news articles of 2025!
Enjoy this roundup of our favorite All About Circuits research news articles of 2025!
By 2030, Korean chipmakers are projected to dominate AI memory (HBM), strengthen foundry/packaging, and gain traction in…
By 2030, Korean chipmakers are projected to dominate AI memory (HBM), strengthen foundry/packaging, and gain traction in the stable analog/power IC market, boosting profitability and global influence.
The company optimized the device's dual-voltage design for high-speed, low-power 1.2 V SoC applications.
The company optimized the device's dual-voltage design for high-speed, low-power 1.2 V SoC applications.
Korean semiconductor giants—like Samsung and SK hynix—are shifting focus from traditional memory to AI-driven tech,…
Korean semiconductor giants—like Samsung and SK hynix—are shifting focus from traditional memory to AI-driven tech, such as HBM, amid global competition, US controls, and government support.
Learn how to solve QLC NAND's endurance, ECC, and performance issues for hyperscale. The approach blends a PCIe Gen5…
Learn how to solve QLC NAND's endurance, ECC, and performance issues for hyperscale. The approach blends a PCIe Gen5 controller with hardware-accelerated LDPC, PerformaShape QoS, and more.
The new Arm Cortex-M33 based GD32F503/505 family emphasizes memory flexibility, reliability, and security.
The new Arm Cortex-M33 based GD32F503/505 family emphasizes memory flexibility, reliability, and security.
In 1975, the 2708 became the first EPROM that engineers could practically socket into 8-bit systems, if they could power it.
In 1975, the 2708 became the first EPROM that engineers could practically socket into 8-bit systems, if they could power it.
Announced today, the launch of CodeFusion Studio 2.0 adds AI workflow and improved multicore support along with modular…
Announced today, the launch of CodeFusion Studio 2.0 adds AI workflow and improved multicore support along with modular framework and configuration tool unification.
Are you a first year electronics engineering student? Or maybe working on a second or third degree in this field? All…
Are you a first year electronics engineering student? Or maybe working on a second or third degree in this field? All About Circuits has the resources you need: comprehensive textbooks, technical articles, calculators, videos, and more for your EE studies.
In 1970, Intel’s 1103 became the first commercially successful DRAM chip, and the first time a semiconductor memory…
In 1970, Intel’s 1103 became the first commercially successful DRAM chip, and the first time a semiconductor memory beat magnetic core at its own game: price, density, and logic-level compatibility.
The memory modules combine high-speed performance, compact layouts, and tool-free modularity for reliable edge AI…
The memory modules combine high-speed performance, compact layouts, and tool-free modularity for reliable edge AI operation in tough environments.
Kioxia says its UFS version 4.1 embedded flash memory device can improve performance and diagnostic capabilities in…
Kioxia says its UFS version 4.1 embedded flash memory device can improve performance and diagnostic capabilities in automotive and data center applications.
Micron’s 256-Gb radiation-tolerant SLC NAND meets tight aerospace reliability benchmarks.
Micron’s 256-Gb radiation-tolerant SLC NAND meets tight aerospace reliability benchmarks.
Memory selection has become a priority, as AI system designs demand more memory. Learn how to navigate hardware designs…
Memory selection has become a priority, as AI system designs demand more memory. Learn how to navigate hardware designs impacts and supply chain issues, and how BOM management tools help smooth the way.
Micron’s 1γ LPDDR5X memory delivers record-breaking speed and efficiency for AI at the edge.
Micron’s 1γ LPDDR5X memory delivers record-breaking speed and efficiency for AI at the edge.
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