Kioxia says its UFS version 4.1 embedded flash memory device can improve performance and diagnostic capabilities in automotive and data center applications.
Kioxia says its UFS version 4.1 embedded flash memory device can improve performance and diagnostic capabilities in automotive and data center applications.
Micron’s 256-Gb radiation-tolerant SLC NAND meets tight aerospace reliability benchmarks.
Micron’s 256-Gb radiation-tolerant SLC NAND meets tight aerospace reliability benchmarks.
Micron’s 1γ LPDDR5X memory delivers record-breaking speed and efficiency for AI at the edge.
Micron’s 1γ LPDDR5X memory delivers record-breaking speed and efficiency for AI at the edge.
With more memory-hungry AI applications around the corner, ST is future-proofing its automotive MCUs with a new solution…
With more memory-hungry AI applications around the corner, ST is future-proofing its automotive MCUs with a new solution based on its phase-change memory technology.
Enjoy this fresh crop of technology news from the Embedded World 2025 trade show in Nuremberg, Germany.
Enjoy this fresh crop of technology news from the Embedded World 2025 trade show in Nuremberg, Germany.
Announced at Embedded World 2025, Weebit Nano's ReRAM module has met a critical benchmark for ICs used in vehicles.
Announced at Embedded World 2025, Weebit Nano's ReRAM module has met a critical benchmark for ICs used in vehicles.
The new SSD, which leverages a PCIe Gen5 interface, may redefine data transfer speeds and reliability for AI PC OEMs.
The new SSD, which leverages a PCIe Gen5 interface, may redefine data transfer speeds and reliability for AI PC OEMs.
Infineon says the new solution is an industry first for radiation-hardened NOR Flash.
Infineon says the new solution is an industry first for radiation-hardened NOR Flash.
In this deep dive, we take a look at how Winbond’s CUBE technology solves memory challenges for edge AI designs.
In this deep dive, we take a look at how Winbond’s CUBE technology solves memory challenges for edge AI designs.
New memory technologies, including HBM4, DDR5 DRAM, and MRAM, each respond to various industries outgrowing current…
New memory technologies, including HBM4, DDR5 DRAM, and MRAM, each respond to various industries outgrowing current storage infrastructure.
Investments in semiconductor manufacturing have been on the rise in recent years. Here are a few new examples.
Investments in semiconductor manufacturing have been on the rise in recent years. Here are a few new examples.
Startups are using and supporting AI in a myriad of ways.
Startups are using and supporting AI in a myriad of ways.
At this year's Future of Memory and Storage show, Microchip, Micron, and Samsung presented new memory solutions in the…
At this year's Future of Memory and Storage show, Microchip, Micron, and Samsung presented new memory solutions in the age of AI—from SSD controllers to LPDDR5X DRAM.
Teledyne e2v’s chips target space-based applications with significantly improved performance, protection against…
Teledyne e2v’s chips target space-based applications with significantly improved performance, protection against radiation, and spatial efficiency.
New transistors, memory devices, and RF modules defy the radiation-saturated conditions of space.
New transistors, memory devices, and RF modules defy the radiation-saturated conditions of space.
Weebit Nano and Efabless are teaming up to make it easier for chip designers to prototype intelligent devices using…
Weebit Nano and Efabless are teaming up to make it easier for chip designers to prototype intelligent devices using Weebit's advanced memory technology.
The new Pascari brand will provide SSDs for data-heavy enterprise applications.
The new Pascari brand will provide SSDs for data-heavy enterprise applications.
From embedded systems to high-performance storage, the latest memory advancements are stacking skyward to maximize…
From embedded systems to high-performance storage, the latest memory advancements are stacking skyward to maximize density and speed.
With speeds up to 143 MHz, the new 2-Mb and 4-Mb serial SRAM devices can be a lower-cost alternative to traditional…
With speeds up to 143 MHz, the new 2-Mb and 4-Mb serial SRAM devices can be a lower-cost alternative to traditional parallel SRAM products.
Three companies—Samsung, Micron, and SK Hynix—have announced moves in the high-bandwidth memory (HBM) 3E market.
Three companies—Samsung, Micron, and SK Hynix—have announced moves in the high-bandwidth memory (HBM) 3E market.
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